C4742 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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C4742

NPN transistor for character display horizontal deflection output application, 1500V, 6A

Hitachi -> Renesas Electronics 

2SC4742

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector surge current

Collector power dissipation

Junction temperature

Storage temperature

C to E diode forward current

Note: 1. Value at TC = 25°C.

Symbol

VCES

VEBO

IC

IC(peak)

IC(surge)

PC*1

Tj

Tstg

ID

Ratings

1500

6

6

7

16

50

150

–55 to +150

7

Unit

V

V

A

A

A

W

°C

°C

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Emitter to base breakdown

V(BR)EBO

6

—

voltage

Collector cutoff current

ICES

—

—

DC current transfer ratio

hFE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

C to E diode forward voltage VECF

—

—

Fall time

tf

—

—

Max

—

Unit

V

Test conditions

IE = 400 mA, IC = 0

500 µA

25

2.0 V

VCE = 1500 V, RBE = 0

VCE = 5 V, IC = 1 A

IC = 5 A, IB = 1.25 A

1.5 V

IC = 5 A, IB = 1.25 A

2.0 V

0.4 µs

IF = 6 A

ICP = 5 A, IB1 = 1 A, IB2 = –2 A

2

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