C5252 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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C5252

NPN transistor for character display horizontal deflection output application

Hitachi -> Renesas Electronics 

2SC5252

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. TC = 25°C

Symbol

VCBO

VCEO

VEBO

IC

IC(peak)

PC*1

Tj

Tstg

Ratings

1500

800

6

15

30

50

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to emitter breakdown V(BR)CEO 800

voltage

Emitter to base breakdown

voltage

V(BR)EBO

6

Collector cutoff current

ICES

—

DC current transfer ratio

hFE1

8

DC current transfer ratio

hFE2

3

Collector to emitter saturation VCE(sat)

—

voltage

Base to emitter saturation

voltage

VBE(sat)

—

Fall time

tf

—

Typ Max Unit Test conditions

—

—V

IC = 10 mA, RBE = ∞

—

—V

IE = 10 mA, IC = 0

—

500 µA

VCE = 1500 V, RBE = 0

—

35

VCE = 5 V, IC = 1 A

—

6

VCE = 5 V, IC = 8 A

—

5

V

IC = 10 A, IB = 3 A

—

1.5 V

IC = 10 A, IB = 3 A

0.15 0.3 µsec ICP = 7 A, IB1 = 2 A, fH = 31.5 kHz

2

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