MJW16110 Просмотр технического описания (PDF) - ON Semiconductor

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MJW16110

NPN Silicon Power Transistors SWITCHMODE Bridge Series

ON Semiconductor 

MJ16110 MJW16110

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS

IC/IB = 10, TC = 100°C, VCE(pk) = 250 V

10K

1K

7K

700

5K

500

3K

VBE(off) = 0 V

300

2K

IB2 = 2 (IB1)

200

VBE(off) = 2 V

1K

100

700

VBE(off) = 5 V

70

500

50

300

30

20

VBE(off) = 0 V

IB2 = 2 (IB1)

VBE(off) = 5 V

VBE(off) = 2 V

100

1.5

2

3

10

5

7

10

15

1.5 2

3

5

7

10

15

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Storage Time

Figure 7. Crossover Time

1K

700

500

200

100

70

50

30

20

10

1.5

VBE(off) = 0 V

IB2 = 2 (IB1)

VBE(off) = 2 V

VBE(off) = 5 V

2

3

5

7

10

15

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Fall Time

IC

VCE

IB

IC(pk)

VCE(pk)

90% VCE(pk)

90% IC(pk)

tsv

trv

tfi

tti

tc

90% IB1

10% VCE(pk) 10%

IC(pk) 2% IC

t, TIME

Figure 9. Inductive Switching Measurements

10

9

8

7

6

IB1 = 2 A

5

1A

4

3

IC = 10 A

2

TC = 25°C

1

0

0

1

2

3

4

5

VBE(off), REVERSE BASE VOLTAGE (VOLTS)

Figure 10. Peak Reverse Base Current

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