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WNM2310 Datasheet PDF - Will Semiconductor Ltd.

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WNM2310 Datasheet PDF : WNM2310 pdf     
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Descriptions
The WNM2310 is N-Channel enhancement MOS Field Effect Transistor and Schottky Diode as a single package for switching. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. Standard Product WNM2310 is Pb-free and Halogen-free.

Features
● Small package SOT-563B
● Featuring a MOSFET and Schottky Barrier
   Diode
● Excellent ON resistance for higher DC current
● Low leakage current Schottky Barrier Diode

Applications
● Driver: Relay, Solenoid, Lamps,Hammers etc.
● Power supply converters circuit
● Load/Power Switching for potable device

 

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Компоненты Описание
PDF
производитель
Integrated N-Channel POWERTRENCH® MOSFET and Schottky Diode
ON Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode ( Rev : 2006 )
Fairchild Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
ON Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode ( Rev : 2006 )
Fairchild Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor

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