STP19NM50N(2010) Datasheet PDF - STMicroelectronics
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STP19NM50N
STMicroelectronics
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STP19NM50N Datasheet PDF :
Description
This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.
Features
■ 100% avalanche tested
■ Low input capacitances and gate charge
■ Low gate input resistance
Application
■ Switching applications
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Компоненты Описание
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производитель
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