STB30H100C Datasheet PDF - Sangdest Microelectronic (Nanjing) Co., Ltd

Features:
• 175°C TJ operation
• Center tap configuration
• Ultralow forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• High frequency operation
• Trench MOS Schottky technology
• This is a Pb − Free Device
• All SMC parts are traceable to the wafer lot

Applications:
• Switching power supply
• Converters
• Free-Wheeling diodes
• Reverse battery protection
• Center tap configuration