K2312 Datasheet PDF - Toshiba
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Chopper Regulator, DC−DC Converter and Motor Drive Applications
● 4-V gate drive
● Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.)
● High forward transfer admittance : |Yfs| = 40 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)
● Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
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PDF
производитель
MOS FIELD EFFECT TRANSISTOR / N-Channel MOS Field Effect Transistor
NEC => Renesas Technology
Silicon N-Channel MOS Field Effect Transistor ( Rev : 2011 )
Diotec Semiconductor Germany
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