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IPI65R190E6 Datasheet PDF - Inchange Semiconductor

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IPI65R190E6
Iscsemi
Inchange Semiconductor Iscsemi
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IPI65R190E6 Datasheet PDF : IPI65R190E6 pdf     
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• DESCRIPTION
• Provide all benefits of a fast switching SJ MOSFET while not
   sacrificing ease of use

• FEATURES
• Static drain-source on-resistance:
   RDS(on) ≤0.19Ω
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

 

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