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FQAF13N80 Datasheet PDF - Fairchild Semiconductor

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FQAF13N80
Fairchild
Fairchild Semiconductor Fairchild
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FQAF13N80 Datasheet PDF : FQAF13N80 pdf     
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
• 8.0A, 800V, RDS(on) = 0.75Ω @VGS = 10 V
• Low gate charge ( typical 68 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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