datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Fairchild  >>> FQAF13N80 PDF

FQAF13N80 Datasheet PDF - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
FQAF13N80
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  2001  
PDF
FQAF13N80 Datasheet PDF : FQAF13N80 pdf     
FQAF13N80 image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features
• 8.0 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 4.0 A
• Low Gate Charge (Typ. 68 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested

Page Link's: 1  2  3  4  5  6  7  8 
 

Share Link: 

English 한국어 简体中文 русский español

All Rights Reserved© datasheetbank.com [ 個人情報 保護方針 ] [ リクエストデータシート ]