datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  DOINGTER  >>> AP9950GP PDF

AP9950GP Datasheet PDF - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Номер в каталоге
Компоненты Описание
производитель
AP9950GP
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER
Other PDF
  no available.
PDF
AP9950GP Datasheet PDF : AP9950GP pdf     
AP9950GP image

Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=70V,ID=68A,RDS(ON)<8.4mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

 

Номер в каталоге
Компоненты Описание
PDF
производитель
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified

Share Link: 

English 한국어 简体中文 русский español

All Rights Reserved© datasheetbank.com [ 個人情報 保護方針 ] [ リクエストデータシート ]