RB551V-30 Просмотр технического описания (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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RB551V-30 Datasheet PDF : 4 Pages
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Typical Characteristics
Forward Characteristics
500
100
10
1
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
FORWARD VOLTAGE VF (V)
Reverse Characteristics
1000
Ta=100 oC
100
10
Ta=25 oC
1
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE VR (V)
Capacitance Characteristics
1000
Ta=25℃
f=1MHz
100
10
1
0
5
10
15
20
REVERSE VOLTAGE VR (V)
250
200
150
100
50
0
0
Power Derating Curve
25
50
75
100
125
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
2
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