BSM50GD120DN2E3226 Просмотр технического описания (PDF) - Infineon Technologies
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BSM50GD120DN2E3226 Datasheet PDF : 9 Pages
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BSM 50 GD120DN2E3226
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 22 Ω
10 3
t
ns
tdoff
10 2
tr
tf
tdon
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 50 A
10 4
ns
t
tdoff
10 3
tr
tdon
10 2
tf
10 1
0
20
40
60
80
A
120
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 22 Ω
25
10 1
0
20
40
60
80
Ω 120
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 50 A
25
E mWs
Eon
E mWs
Eon
15
15
10
Eoff
5
0
0
20
40
60
80
A
120
IC
Semiconductor Group
7
10
Eoff
5
0
0
20
40
60
80
Ω 120
RG
Jan-10-1997
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