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RF3105 Просмотр технического описания (PDF) - RF Micro Devices

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RF3105
RFMD
RF Micro Devices RFMD
RF3105 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Preliminary
2
RF3105
3V 900MHZ LINEAR AMPLIFIER MODULE
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• Spread-Spectrum Systems
2
Product Description
The RF3105 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS handheld digital cellular equipment,
spread-spectrum systems, and other applications in the
824MHz to 849MHz band. The RF3105 has a digital bias
control voltage for low current in standby mode. The
device is self-contained with 50input and output that is
matched to obtain optimum power, efficiency, and linear-
ity characteristics. The module is an ultra-small
6mmx6mm land grid array with backside ground.
0.800 sq
typ
1.700
3.000
0.100
4.390
6.0 sq
2.500
NOTE: Nominal thickness, 1.55 mm.
0.600
0.100
Dimensions in mm.
Optimum Technology Matching® Applied
Si BJT
!GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VCC1 1
7 GND
RF IN 2
6 RF OUT
VREG 3
4
5 VCC2
Functional Block Diagram
Package Style: LGM (6mmx6mm)
Features
• Input/Output Internally Matched @ 50
• Single 3V Supply
• 29dBm Linear Output Power
• 28dB Linear Gain
• 35% Linear Efficiency
Ordering Information
RF3105
3V 900MHz Linear Amplifier Module
RF3105 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A1 001030
2-253

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