BB504M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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BB504M

Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB504M

Power Gain vs. Gate Resistance

40

35

30

25

20

V DS = 5 V

15

V G1= 5 V

V G2S = 4 V

f = 200 MHz

10

10 20 50 100 200 500 1000

Gate Resistance R G (k Ω )

Noise Figure vs. Gate Resistance

4

V DS = 5 V

V G1= 5 V

3 V G2S = 4 V

f = 200MHz

2

1

0

10 20 50 100 200 500 1000

Gate Resistance RG (k Ω)

Power Gain vs. Gate Resistance

40

35

30

25

20

V DS = 5 V

15

V G1= 5 V

V G2S = 4 V

f = 900 MHz

10

10 20 50

100 200

500 1000

Gate Resistance R G (k Ω )

Noise Figure vs. Gate Resistance

4

V DS = 5V

V G1= 5 V

3 V G2S = 4 V

f = 900 MHz

2

1

0

10 20 50 100 200 500 1000

Gate Resistance RG (k Ω)

6

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