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TD62083AFNG

TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

TD62083,084AFNG

Absolute Maximum Ratings (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

Output Sustaining Voltage

Output Current

Input Voltage

Clamp Diode Reverse Voltage

Clamp Diode Forward Current

Power Dissipation

Operating Temperature

Storage Temperature

VCE (SUS)

IOUT

VIN

VR

IF

PD (Note)

Topr

Tstg

−0.5~50

500

−0.5~30

50

500

0.96

−40~85

−55~150

Note: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 40%)

UNIT

V

mA/ch

V

V

mA

W

°C

°C

Recommended Operating Conditions (Ta = −40~85°C)

CHARACTERISTIC

SYMBOL

CONDITION

MIN TYP. MAX UNIT

Output Sustaining Voltage

Output Current

Input Voltage

Input Voltage

(Output ON)

TD62083

TD62084

Clamp Diode Reverse Voltage

Clamp Diode Forward Current

Power Dissipation

VCE (SUS)

DC 1 Circuit

0

―

50

V

―

― 350

IOUT (Note) tpw = 25 ms, 8 Circuits

Duty = 10%

0

Ta = 85°C, Tj = 120°C

Duty = 50%

0

― 260 mA/ch

―

90

VIN

0

―

30

V

VIN(ON)

2.5

―

30

V

8

―

30

VR

IF

PD

Ta = 85°C

―

―

(Note) ―

―

50

V

― 400 mA

―

0.4

W

Note: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 40%)

2

2009-11-02

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