RB521S-30 Просмотр технического описания (PDF) - Semtech Electronics LTD.
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RB521S-30 Datasheet PDF : 3 Pages
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RB521S-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for low current rectification and high speed
switching applications
Features
• Extremely small surface mounting type
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
C
Top View
Marking Code: "C"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60Hz for Cyc.)
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 200 mA
Reverse Current
at VR = 10 V
Symbol
Value
Unit
VR
30
V
IO
200
mA
IFSM
1
A
Tj
125
OC
Ts
- 40 to + 125
OC
Symbol
Max.
Unit
VF
0.5
V
IR
30
µA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
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