BAS216 Просмотр технического описания (PDF) - NXP Semiconductors.

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BAS216

High-speed switching diode

NXP Semiconductors. 

NXP Semiconductors

High-speed switching diode

Product data sheet

BAS216

FEATURES

• Small ceramic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

APPLICATIONS

• High-speed switching in e.g.

surface mounted circuits.

DESCRIPTION

The BAS216 is a high-speed switching diode fabricated in planar technology,

and encapsulated in the SOD110 very small rectangular ceramic SMD

package.

handbook, 4 columns

a

k

cathode mark

k

a

bottom view

Marking code: A6.

side view

top view

MAM139

Fig.1 Simplified outline (SOD110) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

VRRM

VR

IF

IFRM

IFSM

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

CONDITIONS

note 1

square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 1 ms

t=1s

Tamb = 25 °C; see Fig.2; note 1

Note

1. Device mounted on an FR4 printed-circuit board.

MIN.

−

−

−

−

MAX.

85

75

250

500

UNIT

V

V

mA

mA

−

4

A

−

1

A

−

0.5

A

−

400

mW

−65

+150 °C

−

150

°C

2002 May 28

2

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