IRF5NJZ48SCV Просмотр технического описания (PDF) - International Rectifier

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IRF5NJZ48SCV

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)

International Rectifier 

100

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

IRF5NJZ48

100

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

 20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

 20µs PULSE WIDTH

TJ = 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

 TJ = 25° C

 TJ = 150° C

10

4.0

 V DS = 1255V

20µs PULSE WIDTH

5.0

6.0

7.0

8.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.5  ID = 22A

2.0

1.5

1.0

0.5

 VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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