IRF5NJ3315(2001) Просмотр технического описания (PDF) - International Rectifier

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IRF5NJ3315
(Rev.:2001)

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)

International Rectifier 

IRF5NJ3315

100

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

100

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

 20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

 20µs PULSE WIDTH

TJ = 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

 TJ = 25 ° C

 TJ = 150° C

10

 V DS =1550V

20µs PULSE WIDTH

1

4.0

5.0

6.0

7.0

8.0

9.0 10.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.5 ID = 20A

2.0

1.5

1.0

0.5

 VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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