IRF5N3710SCV Просмотр технического описания (PDF) - International Rectifier

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IRF5N3710SCV

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

1000

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

1000

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

IRF5N3710

10

4.5V

 20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

10

4.5V

 20µs PULSE WIDTH

TJ = 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

 TJ = 25 ° C

 TJ = 150° C

10

 V DS =1550V

20µs PULSE WIDTH

1

4

6

8

10

12

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.5 ID = 45A

2.0

1.5

1.0

0.5

 VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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