RMWB33001 Просмотр технического описания (PDF) - Fairchild Semiconductor

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RMWB33001

33 GHz Buffer Amplifier MMIC

Fairchild Semiconductor 

Figure 2. Schematic of Application Circuit

Drain Supply

Vd =4 V

Bond Wires

10,000 pF

10,000 pF

100 pF

100 pF

100 pF

100 pF

Bond Wires

MMIC Chip

RF IN

RF OUT

Ground

(Back of Chip)

Bond Wires

100 pF

10,000 pF

3 kΩ

Bond Wires

100 pF

Gate Supply Vg

Output Power

Detector Voltage Vdet

Note:

1: Detector delivers >0.1V DC into 3kΩ load resistor for > +18dBm output power. If output power level detection is not desired, do not connect to detector bond pad.

Dimensions in mm

0.00

1.19

1.09

Figure 3. Chip Layout and Bond Pad Locations

0.82

1.34

1.83

2.58

3.19

1.19

1.09

0.725

0.57

0.415

0.725

0.57

0.415

0.10

0.10

0.00

0.00

0.00 0.10

0.60

2.85 3.09 3.19

Chip Size is 3.19mm x 1.19mm X 100µm. Back of chip is RF and DC Ground.

©2004 Fairchild Semiconductor Corporation

RMWB33001 Rev. C

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