L74VHC1G01 Просмотр технического описания (PDF) - Leshan Radio Company,Ltd
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L74VHC1G01 Datasheet PDF : 6 Pages
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LESHAN RADIO COMPANY, LTD.
2–Input NAND Gate with
Open Drain Output
L74VHC1G01
The L74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate
CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including an open drain output which provides the ability to set output switching level.
This allows the L74VHC1G01 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external
resistor and power supply.
The L74VHC1G01 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
• High Speed: t PD = 3.7 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16
5
4
1
2
3
SC–88A / SOT–353/SC–70
DF SUFFIX
5
4
1
2
3
TSOP–5/SOT–23/SC–59
DT SUFFIX
MARKING DIAGRAMS
V0d
Pin 1
d = Date Code
V0d
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
PIN ASSIGNMENT
1
IN B
2
IN A
3
GND
4
OUT Y
5
V CC
FUNCTION TABLE
Inputs
A
B
L
L
L
H
H
L
H
H
Output
Y
Z
Z
Z
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
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