IRHQ6110(2004) Просмотр технического описания (PDF) - International Rectifier
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IRHQ6110 Datasheet PDF : 14 Pages
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Pre-Irradiation
N-Channel
Q1,Q4
500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
400
Coss = Cds + Cgd
20 ID = 3.07A
16
IRHQ6110
VDS = 80V
VDS = 50V
VDS = 20V
300
Ciss
200
100
0
1
C oss
C rss
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
2
4
6
8
10 12 14
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
0.1
0.4
TJ = 25° C
VGS = 0 V
0.6
0.8
1.0
1.2
1.4
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
7
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