2SB561 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB561

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB561

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

iC(peak)

PC

Tj

Tstg

Ratings

Unit

–25

V

–20

V

–5

V

–0.7

A

–1.0

A

0.5

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max

Collector to base breakdown

V(BR)CBO

–25

—

—

voltage

Collector to emitter breakdown V(BR)CEO –20

—

—

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

—

voltage

Collector cutoff current

DC current transfer ratio

I CBO

—

—

–1.0

hFE*1

85

—

240

Collector to emitter saturation VCE(sat) —

voltage

Base to emitter voltage

VBE

—

Gain bandwidth product

fT

—

Collector output capacitance Cob

—

–0.2 –0.5

–0.75 –1.0

350 —

20

—

Note: 1. The 2SB561 is grouped by hFE as follows.

B

C

85 to 170 120 to 240

Unit

V

V

V

µA

V

V

MHz

pF

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –20 V, IE = 0

VCE = –1 V,

IC = –0.15 A (Pulse test)

IC = –0.5 A, IB = –0.05 A

VCE = –1 V, IC = –0.15 A

VCE = –1 V, IC = –0.15 A

VCB = –10 V, IE = 0

f = 1 MHz

2

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