¡ Semiconductor
MSM82C55A-2RS/GS/VJS
AC CHARACTERISTICS
Parameter
Setup Time of Address to the Falling Edge of RD
Hold Time of Address to the Rising Edge of RD
RD Pulse Width
Delay Time from the Falling Edge of RD to the Output of
Defined Data
Delay Time from the Rising Edge of RD to the Floating of
Data Bus
Time from the Rising Edge of RD or WR to the Next Falling
Edge of RD or WR
Setup Time of Address before the Falling Edge of WR
Hold Time of Address after the Rising Edge of WR
WR Pulse Width
Setup Time of Bus Data before the Rising Edge of WR
Hold Time of Bus Data after the Rising Edge of WR
Delay Time from the rising Edge of WR to the Output of
Defined Data
Setup Time of Port Data before the Falling Edge of RD
Hold Time of Port Data after the Rising Edge of RD
ACK Pulse Width
STB Pulse Width
Setup Time of Port Data before the rising Edge of STB
Hold Time of Port Bus Data after the rising Edge of STB
Delay Time from the Falling Edge of ACK to the Output of
Defined Data
Delay Time from the Rising Edge of ACK to the Floating of
Port (Port A in Mode 2)
Delay Time from the Rising Edge of WR to the Falling Edge of
OBF
Delay Time from the Falling Edge of ACK to the Rising Edge of
OBF
Delay Time from the Falling Edge of STB to the Rising Edge of
IBF
Delay Time from the Rising Edge of RD to the Falling Edge of
IBF
Delay Time from the the Falling Edge of RD to the Falling Edge
of INTR
Delay Time from the Rising Edge of STB to the Rising Edge of
INTR
Delay Time from the Rising Edge of ACK to the Rising Edge of
INTR
Delay Time from the Falling Edge of WR to the Falling Edge of
INTR
(VCC = 4.5 V to 5.5 V, Ta = –40 to +85°C)
MSM82C55A-2
Symbol
Unit
Remarks
Min. Max.
tAR
20
—
ns
tRA
0
—
ns
tRR
100
—
ns
tRD
—
120 ns
tDF
10
75
ns
tRV
200
—
ns
tAW
0
—
ns
tWA
20
—
ns
tWW
150
—
ns
tDW
50
—
ns
tWD
30
—
ns
tWB
—
200 ns
tIR
20
—
ns
tHR
10
—
ns
tAK
100
—
ns
Load
tST
100
—
ns 150 pF
tPS
20
—
ns
tPH
50
—
ns
tAD
—
150 ns
tKD
20
250 ns
tWOB
—
150 ns
tAOB
—
150 ns
tSIB
—
150 ns
tRIB
—
150 ns
tRIT
—
200 ns
tSIT
—
150 ns
tAIT
—
150 ns
tWIT
—
250 ns
Note: Timing measured at VL = 0.8 V and VH = 2.2 V for both inputs and outputs.
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