TD62001AF(2006) Просмотр технического описания (PDF) - Toshiba

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TD62001AF
(Rev.:2006)

TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic

Toshiba 

Schematics (each driver)

TD62001AP/AF

TD62002AP/AF

TD62001~004AP/AF

TD62003AP/AF

TD62004AP/AF

Note: The input and output parasitic diodes cannot be used as clamp diodes.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Output sustaining voltage

Output current

Input voltage

Input current

Clamp diode reverse voltage

Clamp diode forward current

AP

Power dissipation

AF

Operating temperature

Storage temperature

VCE (SUS)

IOUT

VIN

(Note 1)

IIN

(Note 2)

VR

IF

PD

Topr

Tstg

−0.5 to 50

500

−0.5 to 30

V

mA/ch

V

25

mA

50

V

500

mA

1.47

0.625

W

(Note 3)

−40 to 85

°C

−55 to 150

°C

Note 1: Except TD62001AP/AF

Note 2: Only TD62001AP/AF

Note 3: When mounted on a glass-epoxy PCB (30 mm × 30 mm × 1.6 mm, Cu area: 50%)

2

2006-06-13

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