NTE2530 Просмотр технического описания (PDF) - NTE Electronics

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NTE2530

Silicon Complementary Transistors High Voltage Driver

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Output Capacitance

NTE2530

NTE2531

Cob

VCB = 30V, f = 1MHz

– 15 – pF

– 25 – pF

Turn–On Time

NTE2530

NTE2531

Storage Time

NTE2530

NTE2531

ton VCC = 150V, VBE = –5V,

– 0.085 – µs

10IB1 = –10IB2 = IC = 500mA,

RL = 300Ω, RB = 20Ω,

–

0.12

–

µs

tstg

at IC = 500mA,

Pulse Width = 20µs,

– 4.0 – µs

Duty Cycle ≤ 1%, Note 1

– 3.0 – µs

Fall Time

tf

NTE2530

– 0.6 – µs

NTE2531

– 0.3 – µs

Note 1. For NTE2531, the polarity is reversed.

.256 (6.5)

.197 (5.0)

.090 (2.3)

.059 (1.5)

.275

(7.0)

BCE

.295

(7.5)

.090 (2.3)

.002 (0.5)

.002(0.5)

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