NTE2517 Просмотр технического описания (PDF) - NTE Electronics

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NTE2517

Silicon Complementary Transistors High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Output Capacitance

NTE2517

NTE2518

Cob VCB = 10V, f = 1MHz

– 10 – pF

– 25 – pF

Collector to Emitter Saturation Voltage

NTE2517

NTE2518

VCE(sat) IC = 1A, IB = 50mA

– 110 300 mV

– 250 500 mV

Base to Emitter Saturation Voltage

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Turn–On Time

Storage Time

NTE2517

NTE2518

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

IC = 1A, IB = 50mA

IC = 10µA, IE = 0

IC = 1mA, RBE = ∞

IE = 10µA, IC = 0

IC = 10A, IB1 = 10A,

IB2 = 1A

– 0.85 1.2 V

60 – – V

50 – – V

6––V

– 35 – ns

– 550 – ns

– 350 – ns

Fall Time

tf

– 30 – ns

.315 (8.0)

.118 (3.0)

Dia

.295

(7.5)

EC B

.433

(11.0)

.130

(3.3)

.610

(15.5)

.094 (2.4)

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