NE713
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Noise Figure
Associated Gain
Output Power at 1 dB Gain
Compression Point
Thermal Resistance
SYMBOL
IGSO
IDSS
VGS (off)
gm
NF
Ga
NF
Ga
Po (1 dB)
Rth
MIN.
−
20
−0.5
20
11.5
8.0
TYP.
1.0
40
−1.1
50
0.6
14.0
1.6
9.5
14.5
MAX.
10
120
−3.5
−
0.7
1.8
190
450
UNIT
µA
mA
V
mS
dB
dB
dB
dB
dBm
°C/W
°C/W
TEST CONDITIONS
VGS = −5 V
VDS = 3 V, VGS = 0 V
VDS = 3 V, ID = 100 µA
VDS = 3 V, ID = 10 mA
f = 4 GHz VDS = 3 V
ID = 10 mA
f = 12 GHz
f = 12 GHz VDS = 3 V
ID = 30 mA
NE71300 Channel to case
NE71383B
PACKAGE DIMENSIONS (Unit : mm) [NE71383B]
1.88 ± 0.3
1
4.0 MIN.
2
4.0 MIN.
4
3
1.0 ± 0.1
1. Source
2. Drain
3. Source
4. Gate
2