IS61WV12816DALL(2008) Просмотр технического описания (PDF) - Integrated Silicon Solution

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IS61WV12816DALL
(Rev.:2008)

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Integrated Silicon Solution 

IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,

IS64WV12816DBLL/DBLS

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V

VDD

VDD Relates to GND

–0.3 to 4.0

V

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.0

W

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage

to the device. This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

CAPACITANCE(1,2)

Symbol Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

CI/O

Input/Output Capacitance

VOUT = 0V

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.

6

Integrated Silicon Solution, Inc. — www.issi.com

Rev. C

05/01/08

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