DG858DW45 Просмотр технического описания (PDF) - Dynex Semiconductor

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DG858DW45

Gate Turn-Off Thyristor

Dynex Semiconductor 

DG858DW45

CURVES

4000

Measured under pulse

conditions.

IG(ON) = 10A

Half sine wave 10ms

3000

2000

1000

Tj = 125°C

Tj = 25°C

0

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Instantaneous on-state voltage VTM - (V)

Figure 2. On-state characteristics

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