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DG648BH45 Просмотр технического описания (PDF) - Dynex Semiconductor
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DG648BH45
Gate Turn-off Thyristor
Dynex Semiconductor
DG648BH45 Datasheet PDF : 18 Pages
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4000
3000
Conditions:
T
j
= 25°C, I
FGM
= 30A,
C
S
= 2.0µF,
dI/dt = 300A/µs,
dI
FG
/dt = 30A/µs
DG648BH45
V
D
= 3000V
2000
V
D
= 2000V
1000
0
0
V
D
= 1000V
500
1000
1500
2000
2500
On-state current I
T
- (A)
Fig.8 Turn-on energy vs on-state current
5000
4000
Conditions:
T
j
= 25°C, I
T
= 2000A,
C
S
= 2.0
µ
F, R
S
= 10 Ohms
dI/dt = 300A/
µ
s,
dI
FG
/dt = 30A/
µ
s
3000
3000
V
D
= 3000V
2000
V
D
= 2000V
1000
V
D
= 1000V
0
0
20
40
60
80
Peak forward gate current I
FGM
- (A)
Fig.9 Turn-on energy vs peak forward gate current
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