BSI
BS62LV4000
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER
NAME
VIL
PARAMETER
Guaranteed Input Low
Voltage(2)
TEST CONDITIONS
Vcc=3.0V
VIH
Guaranteed Input High
Voltage(2)
Vcc=3.0V
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
ILO
Output Leakage Current
Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=3.0V
MIN. TYP. (1) MAX.
UNITS
-0.5
--
0.8
V
2.0
--
Vcc+0.2
V
--
--
1
uA
--
--
1
uA
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH = -1mA
Vcc=3.0V
2.4
--
--
V
ICC
Operating Power Supply
Current
CE = VIL, IDQ = 0mA, F = Fmax(3)
Vcc=3.0V
--
--
20
mA
ICCSB
Standby Current-TTL
CE = VIH, IDQ = 0mA
Vcc=3.0V
--
--
1
mA
CE ≧ Vcc-0.2V,
ICCSB1
Standby Current-CMOS VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V Vcc=3.0V
--
0.5
8
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
VDR
Vcc for Data Retention
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
MIN. TYP. (1) MAX.
1.5
--
--
UNITS
V
ICCDR
Data Retention Current
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.3
6
uA
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
tR
Operation Recovery Time
0
--
--
ns
TRC (2)
--
--
ns
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM
( CE Controlled )
Vcc
CE
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE ≥ Vcc - 0.2V
Vcc
tR
VIH
R0201-BS62LV4000
3
Revision 2.3
Jan. 2004