HOME >>> NE5520279A-T1-A Datasheet

NE5520279A-T1-A Даташит

производитель

Номер в каталоге

Компоненты Описание

PDF

NEC => Renesas Technology

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

Match & Start : NE5520279A-T1-A

California Eastern Laboratories.

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

NEC => Renesas Technology

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories.

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

NEC => Renesas Technology

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories.

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

NEC => Renesas Technology

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories.

NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories.

NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET