datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  PTFA192401E Datasheet

PTFA192401E   Даташит

соответствуя,
Like
начиная
концы
N/A
включая
N/A
производитель
Номер в каталоге
Компоненты Описание
PDF
Infineon
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
Infineon
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
Match & Start : PTFA192401E
Infineon
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
Cree
Cree, Inc
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz
Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz
Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Infineon
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz
Infineon
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
Infineon
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
1 2
EnglishEnglish Korean한국어 Chinese日本語 Russian简体中文 Spanishespañol

All Rights Reserved© datasheetbank.com [ 個人情報 保護方針 ] [ リクエストデータシート ]