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STP19N06FI Даташит - STMicroelectronics

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STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ST-Microelectronics
STMicroelectronics ST-Microelectronics
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STP19N06FI Datasheet PDF : STP19N06FI pdf   
STP19N06FI image

■ TYPICAL RDS(ON) = 0.085 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175OC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

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