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STP11NB40FP Даташит - STMicroelectronics

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STP11NB40FP N-CHANNEL 400V - 0.48? - 10.7A - TO-220/TO-220FP PowerMESH? MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
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STP11NB40FP Datasheet PDF : STP11NB40FP pdf   
STP11NB40 image

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.48 Ω
■ EXTREMELY HIGH dV/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

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