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STB19NB20 Даташит - STMicroelectronics

Номер в каталогеSTB19NB20 ST-Microelectronics
STMicroelectronics ST-Microelectronics
Описание (Функция)N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
STB19NB20 PDF Даташит : STB19NB20 pdf   
STB19NB20 image

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
   
■ TYPICAL RDS(on) = 0.150 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ FOR THROUGH-HOLE VERSION CONTACT
    SALES OFFICE
   
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
    EQUIPMENT AND UNINTERRUPTIBLE
    POWER SUPPLIES AND MOTOR DRIVE
   

 
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