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FQPF4N60 Даташит - Kersemi Electronic Co., Ltd.

Номер в каталогеОписание (Функция)производитель
FQPF4N60 600V N-Channel MOSFET KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
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FQPF4N60 Datasheet PDF : FQPF4N60 pdf   
FQPF4N60 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 8.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

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