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BD810 Даташит - Inchange Semiconductor

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BD810 Silicon PNP Power Transistors Iscsemi
Inchange Semiconductor Iscsemi
BD810 PDF Даташит : BD810 pdf   
BD810 image

DESCRIPTION
·With TO-220C package
·Complement to type BD809
·DC current gain
   : hFE = 30 (Min) @ IC = 2.0 Adc

APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

 

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