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FQA18N50V2 Даташит - Fairchild Semiconductor

Номер в каталогеFQA18N50V2 Fairchild
Fairchild Semiconductor Fairchild
Описание (Функция)500V N-Channel MOSFET
FQA18N50V2 PDF Даташит : FQA18N50V2 pdf   


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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features
• 20A, 500V, RDS(on) = 0.265Ω @VGS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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Список FQA18N50V2 имеет с аналогичным паспорте

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