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FQA11N90C_F109 Даташит - Fairchild Semiconductor

Номер в каталогеОписание (Функция)производитель
FQA11N90C_F109 900V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQA11N90C_F109 PDF Даташит : FQA11N90C_F109 pdf   
FQA11N90C image

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

• 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 60 nC)
• Low Crss ( typical 23pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

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В связи с паспорте перечисляет FQA11N90C_F109

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