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FQA11N90C-F109 Даташит - Fairchild Semiconductor

Номер в каталогеFQA11N90C-F109 Fairchild
Fairchild Semiconductor Fairchild
Описание (Функция)900V N-Channel MOSFET
FQA11N90C-F109 PDF Даташит : FQA11N90C-F109 pdf   


FQA11N90C image

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features
• 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 60 nC)
• Low Crss ( typical 23pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

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Список FQA11N90C-F109 имеет с аналогичным паспорте

[ Fairchild  FQB6N70 ]  [ Fairchild  FQPF2N90 ]  [ UTC  9N90 ]  [ UTC  9N90-T3P-T ]  [ UTC  9N90G-T3P-T ]  [ UTC  9N90G-T47-T ]  [ UTC  9N90G-TF1-T ]  [ UTC  9N90L-T3P-T ]  [ UTC  9N90L-T47-T ]  [ UTC  9N90L-TF1-T

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