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Номер в каталоге(s) : MRF151A
MACOM
Tyco Electronics
Компоненты Описание : The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

Номер в каталоге(s) : BAR64-02W
Kexin
KEXIN Industrial
Компоненты Описание : Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)

Features
High voltage current controlled RF resistor for RF attenuator and switches
Frequency range above 1 MHz
Low resistance and short carrier lifetime
Very low inductance
For frequencies up to 3 GHz
Extremely small plastic SMD package

Номер в каталоге(s) : BAR64-02W
Twtysemi
TY Semiconductor
Компоненты Описание : Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)

Features
High voltage current controlled RF resistor for RF attenuator and switches
Frequency range above 1 MHz
Low resistance and short carrier lifetime
Very low inductance
For frequencies up to 3 GHz
Extremely small plastic SMD package

Номер в каталоге(s) : SF2150E
RFM
RF Monolithics, Inc
Компоненты Описание : RF Filter, 915 MHz

RF Filter, 915 MHz

• RF Filter, 915 MHz, 10 MHz BW
• 3.0 x 3.0 x 1.4 mm Surface-Mount Case

Номер в каталоге(s) : SK702
Polyfet-RF
Polyfet RF Devices
Компоненты Описание : RF POWER VDMOS TRANSISTOR

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
90.0 Watts Push - Pull Package Style  AK
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT

Номер в каталоге(s) : MRF16030
MACOM
Tyco Electronics
Компоненты Описание : RF Line NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor

Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz.
   
• Specified 28 Volt, 1.6 GHz Class–C Characteristics
    Output Power = 30 Watts
    Minimum Gain = 7.5 dB, @ 30 Watts
    Minimum Efficiency = 40% @ 30 Watts
• Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Номер в каталоге(s) : SC201
POLYFET
Polyfet RF Devices
Компоненты Описание : SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR

General Description
Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR
4.0 Watts Single Ended
Package Style AC

HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT

Номер в каталоге(s) : SD702
POLYFET
Polyfet RF Devices
Компоненты Описание : SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
90.0 Watts Push - Pull Package Style AD

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Номер в каталоге(s) : SM341
Polyfet-RF
Polyfet RF Devices
Компоненты Описание : SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

150.0 Watts Single Ended
Package Style AM

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Номер в каталоге(s) : SM724
Polyfet-RF
Polyfet RF Devices
Компоненты Описание : SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

60.0 Watts Single Ended
Package Style AM

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

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