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Номер в каталоге(s) : 2SJ139
ETC
Unspecified
Компоненты Описание : MOS FIELD EFFECT POWER TRANSISTOR

MOS FIELD EFFECT POWER TRANSISTOR

Номер в каталоге(s) : 2SJ141
ETC
Unspecified
Компоненты Описание : MOS FIELD EFFECT POWER TRANSISTOR

MOS FIELD EFFECT POWER TRANSISTOR

Номер в каталоге(s) : 2SJ154
ETC
Unspecified
Компоненты Описание : MOS FIELD EFFECT POWER TRANSISTOR

MOS FIELD EFFECT POWER TRANSISTOR

Номер в каталоге(s) : 2K2139 K2139
NEC
NEC => Renesas Technology
Компоненты Описание : MOS FIELD EFFECT TRANSISTOR

MOS FIELD EFFECT TRANSISTOR
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION
The 2SK2139 is N-Channel POWER MOS FIELD EFFECT TRANSISTOR designed for high voltage switching applications.

FEATURES
• Low On-Resistance
  RDS(on)= 1.5 ΩMAX. (VGS= 10 V, ID= 2.5 A)
• Low CissCiss= 930 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 (MP-45F) Package

Номер в каталоге(s) : K699
NEC
NEC => Renesas Technology
Компоненты Описание : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

Номер в каталоге(s) : K773
NEC
NEC => Renesas Technology
Компоненты Описание : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

Номер в каталоге(s) : K704 2SK704
NEC
NEC => Renesas Technology
Компоненты Описание : N - CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

N - CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

Номер в каталоге(s) : K736 2SK736
NEC
NEC => Renesas Technology
Компоненты Описание : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

DESCRIPTION
The 2SK736 is N-Channel MOS FIELD EFFECT POWER TRANSISTOR designed for solenoid, motor and lamp driver.

Номер в каталоге(s) : K784 2SK784
NEC
NEC => Renesas Technology
Компоненты Описание : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

DESCRIPTION
The 2SK784 is N-channel MOS FIELD EFFECT POWER TRANSISTOR designed for switching POWER supplies DC-DC converters.

Номер в каталоге(s) : 2N6898
NJSEMI
New Jersey Semiconductor
Компоненты Описание : POWER MOS FIELD-EFFECT TRANSISTORs

POWER MOS FIELD-EFFECT TRANSISTORs

P-Channel Enhancement-Mode POWER MOS FIELD-EFFECT TRANSISTORs

DESCRIPTION
■ SOA is POWER-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device

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