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Номер в каталоге(s) : NMSD200B01 NMSD200B01-7 NMSD200B01 NMSD200B01-7
Diodes
Diodes Incorporated.
Компоненты Описание : 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE

General Description
• NMSD200B01 is best suited for switching voltage regulator AND power management applications. It improves efficiency AND reliability of DC-DC converters used in Voltage Regulator Modules (VRM) AND can support continuous maximum current of 200mA. It features an ESD protected discrete N-MOSFET with low on-resistance AND a discrete SCHOTTKY DIODE with low forward drop. It reduces component count, consumes less space AND minimizes parastic losses. The component devices can be used as a part of a circuit or as a stAND alone discrete device.

Features
N-MOSFET with ESD Gate Protection
N-MOSFET with Low On-Resistance (RDS(ON))
• Low Vf SCHOTTKY DIODE
• Low Static, Switching AND Conduction Losses
• Good dynamic performance
• Surface Mount Package Suited for Automated Assembly
• Lead Free By Design/ROHS Compliant (Note 1)
• "Green" Device (Note 2)

Номер в каталоге(s) : IRF7807VD2
IR
International Rectifier
Компоненты Описание : FETKY™ MOSFET / SCHOTTKY DIODE

Description
The FETKY™ family of Co-Pack HEXFETMOSFETs AND SCHOTTKY DIODEs offers the designer an innovative, board space saving solution for switching regulator AND power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International RECTIFIER’s low forward drop SCHOTTKY RECTIFIERs results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

• Co-Pack N-channel HEXFET® Power MOSFET
   AND SCHOTTKY DIODE
• Ideal for SYNCHRONOUS RECTIFIERs in DC-DC
   Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf SCHOTTKY RECTIFIER

Номер в каталоге(s) : IRF7807D1
IR
International Rectifier
Компоненты Описание : FETKY™ MOSFET / SCHOTTKY DIODE

Description
The FETKY™ family of Co-Pack HEXFETMOSFETs AND SCHOTTKY DIODEs offers the designer an innovative, board space saving solution for switching regulator AND power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International RECTIFIER’s low forward drop SCHOTTKY RECTIFIERs results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

• Co-Pack N-channel HEXFET® Power MOSFET
   AND SCHOTTKY DIODE
• Ideal for SYNCHRONOUS RECTIFIERs in DC-DC
   Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf SCHOTTKY RECTIFIER

Номер в каталоге(s) : IRF7807D2
IR
International Rectifier
Компоненты Описание : FETKY™ MOSFET / SCHOTTKY DIODE

Description
The FETKY™ family of Co-Pack HEXFET® MOSFETs AND SCHOTTKY DIODEs offers the designer an innovative, board space saving solution for switching regulator AND power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International RECTIFIER’s low forward drop SCHOTTKY RECTIFIERs results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

• Co-Pack N-channel HEXFET® Power MOSFET
   AND SCHOTTKY DIODE
• Ideal for SYNCHRONOUS RECTIFIERs in DC-DC
   Converters up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf SCHOTTKY RECTIFIER

Номер в каталоге(s) : IRF7807D1PBF
IR
International Rectifier
Компоненты Описание : FETKY MOSFET / SCHOTTKY DIODE

Description
The FETKY™ family of Co-Pack HEXFET® MOSFETs AND SCHOTTKY DIODEs offers the designer an innovative, board space saving solution for switching regulator AND power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International RECTIFIER’s low forward drop SCHOTTKY RECTIFIERs results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

• Co-Pack N-channel HEXFET® Power MOSFET
   AND SCHOTTKY DIODE
• Ideal for SYNCHRONOUS RECTIFIERs in DC-DC
   Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf SCHOTTKY RECTIFIER
• Lead-Free

Номер в каталоге(s) : 1N3082
NJSEMI
New Jersey Semiconductor
Компоненты Описание : SI RECTIFIER, 200 MA < I (O) / I (F) s 500 MA

Description: Si RECTIFIER, 200 mA < I (O) / I (F) s 500 mA

Номер в каталоге(s) : 1N4250
NJSEMI
New Jersey Semiconductor
Компоненты Описание : FAST RECTIFIER, 200 MA < I(O)/I(F) s 500 MA

Description: Fast RECTIFIER, 200 mA < I(O)/I(F) s 500 mA

Номер в каталоге(s) : 1N4536
NJSEMI
New Jersey Semiconductor
Компоненты Описание : FAST RECTIFIER, 100 MA < I(O)/I(F) s 200 MA

Description: Fast RECTIFIER, 100 MA < I(O)/I(F) s 200 mA

Номер в каталоге(s) : IRF7807VD1PBF
IR
International Rectifier
Компоненты Описание : FETKY MOSFET / SCHOTTKY DIODE

Description
The FETKY™ family of Co-Pack HEXFET® MOSFETs AND SCHOTTKY DIODEs offers the designer an innovative, board space saving solution for switching regulator AND power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International RECTIFIER’s low forward drop SCHOTTKY RECTIFIERs results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

• Co-Pack N-channel HEXFET® Power MOSFET
   AND SCHOTTKY DIODE
• Ideal for SYNCHRONOUS RECTIFIERs in DC-DC
   Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf SCHOTTKY RECTIFIER
• 100% RG Tested
• Lead-Free

Номер в каталоге(s) : LMN400E01 LMN400E01-7
Diodes
Diodes Incorporated.
Компоненты Описание : 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET

General Description
· LMN400E01 is best suited for applications where the load needs to be turned on AND off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage AND can support continuous maximum current of 400 mA. It also contains an ESD protected discrete N-MOSFET that can be used as control. The component can be used as a part of a circuit or as a stAND alone discrete device.

Features
· Voltage Controlled Small Signal Switch
· N-MOSFET with ESD Gate Protection
· Surface Mount Package
· Ideally Suited for Automated Assembly Processes
· Lead Free By Design/ROHS Compliant (Note 1)
· "Green" Device (Note 2)

 

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