The third generation of MESH OVERLAY Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
TYPICAL RDS(on) = 0.82Ω
EXTREMELY HIGH dv/dt CAPABILITY
GATE-TO-SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED