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STW11NB80 Datasheet PDF - STMicroelectronics

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STW11NB80 Datasheet PDF : STW11NB80 pdf     
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DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.65 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

 

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Номер в каталоге
Компоненты Описание
PDF
производитель
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET
New Jersey Semiconductor
N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET
Unspecified
N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET
Unspecified
0.5 mm-pitch ZIF-Slide Type
Unspecified
N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET
New Jersey Semiconductor
N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
Unspecified
N-Channel MOSFET 650V, 12A, 0.65Ω
Unspecified
N-Channel MOSFET 650V, 12A, 0.65Ω
MagnaChip Semiconductor
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
60 V, Dual Diodes / TO-220
Nihon Inter Electronics

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