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STP10NM60ND Даташит - STMicroelectronics

Номер в каталогеОписание (Функция)производитель
STP10NM60ND N-channel 600 V, 0.57 ?, 8 A, DPAK, TO-220FP, TO-220 FDmesh? II Power MOSFET (with fast diode) ST-Microelectronics
STMicroelectronics ST-Microelectronics
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STP10NM60ND Datasheet PDF : STP10NM60ND pdf   
10NM60ND image

This FDmesh II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

STP10NM60ND

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